dated : 20/05/2003 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc930c1?f1 npn silicon epitaxial planar transistor for fm rf amp, mixer, osc, converter and if amplifier. the transistor is subdivided into four groups c1, d1, e1 and f1, according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. to-92 plastic package weight approx. 0.19g absolute maximum ratings (t a = 25 ) symbol value unit collector base voltage v cbo 30 v collector emitter voltage v ceo 20 v emitter base voltage v ebo 5 v collector current i c 30 ma power dissipation p tot 250 mw junction temperature t j 125 o c storage temperature range t s -55 to +125 o c
dated : 20/05/2003 semtech electronics ltd. ( subsidiary of sino-tech internati onal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? st 2sc930c1?f1 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =6v, i c =1ma current gain group c1 d1 e1 f1 h fe h fe h fe h fe 40 60 100 160 - - - - 80 120 200 320 - - - - collector cutoff current at v cb =10v i cbo - - 1 a emitter cutoff current at v eb =4v i ebo - - 1 a gain bandwidth product at v ce =6v, i c =1ma f t 170 300 - mhz reverse transfer capacitance at v cb =6v, f=1mhz cre 1 1.3 1.8 pf base to collector time constant at v cb =6v, i c =1ma, f=31.9mhz rbb ? cc - 20 36 ps noise figure at v cb =6v, i c =1ma, f=100mhz nf - 4 - db turn-on time at v in =+12v, v be =-3v,appointed circuit t on - 30 - ns turn-off time at v in =-12v, v be =+3v, appointed circuit t off - 30 - ns
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